VANADIUM(IV) OXIDE
VANADIUM(IV) OXIDE
CAS: 12036-21-4
Molecular Formula: VO2
VANADIUM(IV) OXIDE - Names and Identifiers
| Name | VANADIUM(IV) OXIDE |
| Synonyms | VO2 BASIS) (METALS VANADIUM OXIDE vanadiumoxide(vo2) VANADIUM(IV) OXIDE VANADIUM TETRAOXIDE Vanadium oxide (VO2) |
| CAS | 12036-21-4 |
| EINECS | 234-841-1 |
VANADIUM(IV) OXIDE - Physico-chemical Properties
| Molecular Formula | VO2 |
| Molar Mass | 82.94 |
| Density | 4.339 g/mL at 25 °C(lit.) |
| Melting Point | 1967°C |
| Water Solubility | Insoluble in water. |
| Storage Condition | Room Temprature |
| MDL | MFCD00049702 |
| Physical and Chemical Properties | Black to dark blue tetragonal crystals, rutile. Stable in air at room temperature. The relative density is 4.339 and the melting point is 1967 ℃. Hygroscopic, insoluble in water, soluble in acid, alkali. |
| Use | Chemical formula VO2. Molecular weight 82.94. Dark blue powder crystals. The specific gravity was 4.339. Melting Point 1967 °c. Flammable. It belongs to sodium chloride configuration. Insoluble in water, soluble in acid and alkali. Amphoteric: soluble in acid to form tetravalent vanadium acyl ions (VO2 ); Soluble in alkali to form subvanadate (M2V4O9 and M2V2O5). The chemical properties are not very stable. Slow oxidation in air, and nitric acid to produce vanadium pentoxide. It is prepared by the action of oxalic acid, carbon, phosphorus and sulfur dioxide after heating with equal molar ratio of vanadium pentoxide and vanadium trioxide by isolated air or heating and melting of vanadium pentoxide. Vanadium dioxide is mainly used as a high temperature catalyst. |
VANADIUM(IV) OXIDE - Risk and Safety
| Hazard Symbols | Xi - Irritant |
| Risk Codes | 36/38 - Irritating to eyes and skin. |
| Safety Description | S26 - In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. S37/39 - Wear suitable gloves and eye/face protection |
| UN IDs | UN3285 |
VANADIUM(IV) OXIDE - Method for preparing vanadium dioxide with intelligent energy saving performance by hydrothermal method
from Palm Bridge research
Application (patent) number:
CN 200910238799
application date:
November 25, 2009
Public/Announcement Number:
CN 101700909 B
applicant (patent):
University of Science and Technology of China
inventor:
Long March , Zhang Xiaodong , xie yi
National and provincial code:
Anhui
cited:
Abstract:
A method for preparing vanadium dioxide by hydrothermal method, comprising: adding an oxidation, reduction, or acid-base regulator to a hydrothermal kettle containing an appropriate amount of vanadium source water solution, the hydrothermal kettle was then incubated in an oven at 40 °c to 300 °c for 30 minutes to 5 days. After the reaction was complete, the vanadium dioxide was collected by centrifugation. The preparation method provided by the invention has the advantages of simple process, low cost, high yield and mass production, and the obtained vanadium dioxide nano powder with intelligent energy saving performance has good purity. Further, in the present invention, vanadium dioxide doped nano-powder is obtained by adding an appropriate amount of a compound containing tungsten, molybdenum, manganese, chromium or titanium in the vanadium source water solution, so as to adapt to a wider range of industrial applications. Different morphologies of vanadium dioxide nanopowders can be controlled by controlling the types of vanadium sources and the amount of oxidation, reduction, or acid-base regulators.
sovereignty:
A method for preparing vanadium dioxide with intelligent energy saving performance by hydrothermal method is characterized by adding an oxidation, reduction, or acid-base regulator to a hydrothermal kettle containing a vanadium source water solution, the concentration of the vanadium source in the aqueous solution is 0.001mol/L or more, and the vanadium source includes ammonia metavanadate, sodium orthovanadate, vanadium pentoxide, potassium metavanadate, vanadyl trichloride, Vanadium tetrachloride, vanadyl sulfate, vanadyl acetylacetonate complex, vanillin vanadyl complex, vanadium trichloride, V2S5, VS2, VOOH, V(OH)2 · NH2, V2O3, vanadium acetylacetonate complex, and combinations thereof, the oxidation, reduction, or acid-base regulator includes an oxidizing acid-base, a reducing acid-base, a non-oxidizing, a reducing acid-base, or other substances having oxidation, reduction, and combinations thereof; the hydrothermal kettle was then incubated in an oven at 40 °c to 300 °c for 30 minutes to 5 days. After the reaction was complete, the vanadium dioxide was collected by centrifugation.
Last Update：2024-01-02 23:10:35
VANADIUM(IV) OXIDE - Study on the application of vanadium dioxide thin film in laser protection
from VIP
Author:
Abstract:
The continuous development of laser weapons on the battlefield puts forward higher requirements for laser protection. Because the phase transition temperature of VO2 thin film is close to room temperature, it has good photoelectric properties, and it is the most promising laser protective material for infrared detector. The optical and electrical properties of VO2 thin film are introduced, and the related problems and development prospects of its application in laser protection are discussed.
Key words:
VO_2 thin film; Metal-semiconductor phase transition; laser Protection; Preparation process
DOI:
10.3969/j.issn.1007-2276.2005.05.006
cited:
year:
2005
Last Update：2023-08-16 22:05:47
VANADIUM(IV) OXIDE - Preparation and properties of vanadium dioxide thin films at low temperature
from VIP Journal Professional Edition
Author:
Lixia Wang , Li Jianping , s , Gao Xiaoguang
Abstract:
for the application of VO2 thin film in microbolometer, vanadium oxide thin films were prepared by radio frequency reactive sputtering at room temperature, influence of electrical properties and composition. By adjusting the oxygen partial pressure, the amorphous film with a composition close to VO2 is obtained, and then the VO2 film with high temperature coefficient of resistance and low resistivity can be prepared by oxidation annealing at 400 ℃ in air, the temperature coefficient of resistance is about -4%/℃, the sheet resistance of the thin film is R □ 100-300 kΩ; The thin film is deposited at room temperature, the preparation method of annealing at 400 ℃ has good compatibility with micro Electro Mechanical systems (MEMS) process.
Key words:
DOI:
10.3321/j.issn:1000-3290.2006.06.032
cited:
year:
2006
Last Update：2023-08-16 22:05:47
VANADIUM(IV) OXIDE - Preparation of vanadium dioxide thin film and analysis of its phase transition mechanism
from Wanfang
Author:
Chen Changqi , Zhu Wu , gan Shu Yi , Wang Xianlu
Abstract:
VO2 is a solid state thermochromic material. With the change of temperature, its crystalline structure will change from semiconductor state to metal state, and the phase transition is reversible. Due to the great changes in the electrical, magnetic and optical properties before and after the phase change, it has become a promising material for electrical/optical conversion, optical storage, laser protection and smart window. In this paper, the preparation methods of VO2 film and the research progress of phase transition mechanism are reviewed.
Key words:
vanadium dioxide thin film thermochromic phase change thermal hysteresis loop
cited:
year:
2001
Last Update：2023-08-16 22:05:47
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